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The RGS30TSX2GC11 is a single N-channel Field Stop Trench IGBT manufactured by ROHM Semiconductor. It features an integrated Fast Recovery Diode (FRD) and supports a collector-emitter voltage of 1200V with a continuous collector current of 15A at 100°C. The device offers a typical saturation voltage of 1.7V and a short-circuit withstand time of 10µs. Packaged in a TO-247N-3 housing, it operates within a temperature range of -55°C to +175°C and dissipates up to 267W.
Verify the specific suffix GC11 against the manufacturer's latest datasheet to confirm packaging details and RoHS status. Ensure the component meets AEC-Q101 requirements if intended for automotive applications. Cross-reference the part number with official ROHM documentation to avoid counterfeit risks.
Select this component for high-reliability inverter designs requiring 1200V blocking capability. The 10µs short-circuit tolerance provides protection during fault conditions. Consider the thermal resistance and package size when designing heat sinks for continuous operation at elevated temperatures.
This part belongs to the RGS series of automotive-grade IGBTs from ROHM. The series is characterized by its field stop trench technology, which optimizes the trade-off between conduction and switching losses. It is designed specifically for demanding environments where long-term reliability and short-circuit safety are critical.
Direct replacements include other ROHM RGS series parts with similar voltage and current ratings, such as RGS30TSX2DHR or RGS80TSX2DGC11, provided pinouts and electrical characteristics match the application requirements.