ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 50A TO-263L
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：50 A
- Current - Collector Pulsed (Icm)：75 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 25A
- Power - Max：206 W
- Switching Energy：810µJ (on), 650µJ (off)
- Input Type：Standard
- Gate Charge：31 nC
- Td (on/off) @ 25°C：28ns/91ns
- Test Condition：400V, 25A, 10Ohm, 15V
- Reverse Recovery Time (trr)：95 ns
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：TO-263L
- Grade：Automotive
- Qualification：AEC-Q101
Download product information
Overview
The RGS50NL65DHRBTL is a single silicon Insulated Gate Bipolar Transistor (IGBT) from ROHM Semiconductor, designed for automotive applications. It features a Field Stop Trench structure with an integrated Fast Recovery Diode (FRD). Key electrical parameters include a collector-emitter breakdown voltage of 650 V and a continuous collector current of 50 A at 25°C. The device supports short-circuit withstand times of 8 μs and operates within a temperature range of -40°C to +175°C. Packaged in a surface-mount TO-263L (TO-263-3) format, it offers low saturation voltage and high thermal performance suitable for power conversion systems.
Feature Summary
- Qualified to AEC-Q101 automotive standards
- Integrated very fast and soft recovery FRD
- Guaranteed 8μs short-circuit withstand time
- Low collector-emitter saturation voltage
Applications
- On-board chargers
- Off-board chargers
- DC-DC converters
- Industrial inverters
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm the specific suffix matches the required automotive qualification and package variant. Request official datasheets and test reports to validate electrical characteristics against application requirements. Ensure storage conditions comply with moisture sensitivity levels prior to soldering.
Selection Notes
Select this IGBT when automotive reliability and high-speed switching are critical. The integrated FRD simplifies circuit design by eliminating external diode requirements. Consider the 8μs short-circuit tolerance for robust fault protection strategies. Evaluate thermal management needs based on the 206 W power dissipation rating and TO-263L package constraints.
Part Context
This component belongs to ROHM's automotive-grade IGBT lineup utilizing trench field stop technology. It is engineered to replace older discrete solutions by combining the switch and diode in one package. The series targets efficiency improvements in electric vehicle powertrains and industrial motor drives requiring compact, high-reliability power modules.
Replacement Considerations
Public confirmed substitute part numbers are not provided in the available documentation. Verify pinout compatibility and electrical ratings before considering alternative manufacturers. Consult ROHM for recommended upgrades or legacy replacements if discontinuation occurs.
