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The RGS60NL65HRBTL is a single N-channel Field Stop Trench IGBT manufactured by ROHM Semiconductor, designed for automotive applications. It features a collector-emitter voltage (VCEO) of 650 V and a continuous collector current (IC) of 56 A at 25°C. The device exhibits a typical collector-emitter saturation voltage (VCE(sat)) of 2.1 V and a maximum gate-emitter voltage (VGE) of 30 V. Power dissipation (Pd) is rated at 223 W. Operating temperatures range from -40°C to +175°C. It utilizes a TO-247N-3 package with through-hole mounting and holds AEC-Q101 qualification.
Verify the specific suffix HRBTL against the official datasheet to confirm pinout and packaging details. Ensure the supplier provides valid traceability documents. Confirm that the component meets the required AEC-Q101 standards for your specific automotive application environment before finalizing procurement.
Select this component when a 650V IGBT with high current capacity and automotive qualification is required. Compare the 2.1V VCE(sat) and 223W Pd against thermal constraints. Consider the TO-247N-3 package size for PCB layout compatibility. Verify short-circuit withstand time requirements against system protection limits.
This part belongs to ROHM's automotive-grade IGBT portfolio utilizing Field Stop Trench technology. It complements other models like the RGW series by offering robust performance in high-power switching applications. The TO-247N-3 package distinguishes it from surface-mount alternatives within the same voltage class.
Check for direct substitutes such as the RGS60NL65HR variant, ensuring pin compatibility and electrical parameter alignment. Verify that any replacement maintains AEC-Q101 certification and matches the TO-247N-3 footprint.