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The RGS80NL65HRBTL is a single N-channel silicon IGBT manufactured by ROHM Semiconductor, designed for automotive applications. It features a Field Stop Trench structure and is housed in a TO-263-3 (LPDL) surface-mount package. The device supports a maximum collector-emitter voltage of 650 V and a continuous collector current of 40 A at 100°C. Key electrical parameters include a typical collector-emitter saturation voltage of 1.5 V and a gate-emitter leakage current of 200 nA. It operates within a temperature range of -40°C to +175°C and holds AEC-Q101 qualification.
Verify the specific suffix HRBTL against the official datasheet to confirm the tape-and-reel packaging configuration. Ensure the component meets the required AEC-Q101 standards for your target automotive application. Cross-reference the manufacturer part number with authorized distributors to avoid counterfeit components. Confirm RoHS compliance status before integration into environmentally regulated assemblies.
Select this component when a low saturation voltage and high-speed switching capability are required in a surface-mount form factor. The TO-263-3 package offers a balance between thermal dissipation and PCB space efficiency. Consider the 650V rating for medium-voltage DC bus applications. Evaluate the 40A current capacity against peak load requirements to ensure adequate derating margins.
This part belongs to ROHM's high-speed fast-switching IGBT series optimized for automotive use. It complements other models in the RGW and RGS families, offering similar electrical characteristics but in a different package style. The LPDL package distinguishes it from through-hole alternatives like the TO-247N variants, providing a solution for automated surface-mount assembly processes.
Direct replacements may include the RGW80NL65HRB or RGW80NL65HRBTL, which share identical electrical specifications and pinout configurations. Verify that any substitute maintains the same AEC-Q101 qualification level and thermal resistance characteristics to ensure compatibility with existing heatsinking and circuit designs.