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The RGS80TS65DHRC11 is a single silicon IGBT from ROHM Semiconductor, housed in a TO-247N-3 through-hole package. It features a collector-emitter maximum voltage (VCEO) of 650 V and a continuous collector current of 73 A at 25°C. The device has a collector-emitter saturation voltage of 2.1 V and a gate-emitter maximum voltage of ±30 V. Power dissipation is rated at 272 W, with an operating temperature range from -40°C to +175°C. It carries AEC-Q101 qualification.
Verify the specific suffix DHRC11 against the official datasheet to confirm pinout and thermal characteristics. Ensure the supplier provides the original manufacturer's certificate of conformity. Check for RoHS compliance status as indicated in the product specifications. Confirm the tube packaging quantity matches project requirements before ordering.
Select this component when a 650V rating and high current capacity are required for automotive or industrial applications. The 73 A continuous current rating supports robust load handling. Verify that the 2.1 V saturation voltage aligns with thermal management constraints. Ensure the TO-247N-3 package fits the available PCB real estate and heatsinking solution.
This part belongs to ROHM's RGS series of trench field stop IGBTs. These devices are designed to balance low conduction losses with fast switching speeds. The series is widely used in applications requiring high reliability and efficiency under demanding electrical conditions.
Check for direct substitutes within the same RGS series with compatible voltage and current ratings. Verify pin compatibility and thermal resistance values before swapping. Consult the manufacturer's cross-reference guide for approved alternative part numbers.