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The RGS80TSX2DGC11 is a single-channel Field Stop Trench IGBT manufactured by ROHM Semiconductor. It features an integrated Fast Recovery Diode (FRD) and operates with a collector-emitter voltage of 1200 V and a continuous collector current of 80 A at 25°C. The device exhibits a typical saturation voltage of 2.1 V and supports a short-circuit tolerance of 10 µs. Packaged in a TO-247N-3 through-hole housing, it handles up to 555 W power dissipation and functions within a junction temperature range of -40°C to +175°C.
Verify the specific suffix DGC11 against official datasheets to confirm the presence of the built-in FRD, as standard RGS80TSX2 variants may lack this feature. Ensure thermal management designs accommodate the 555 W dissipation rating. Confirm RoHS compliance status via manufacturer documentation before integration into regulated assemblies.
Select this component when high current handling and inherent short-circuit ruggedness are required. The integrated diode simplifies circuit topology compared to discrete anti-parallel configurations. Evaluate gate drive requirements against the specified switching times to ensure compatibility with existing control logic and minimize electromagnetic interference.
This part belongs to the RGS series of industrial-grade IGBTs designed for general-purpose applications. Unlike automotive-specific variants such as the RGA series, this model lacks AEC-Q101 certification and is explicitly not recommended for vehicle-mounted equipment. It serves as a standard solution for industrial power conversion tasks.
Direct substitutes include other ROHM RGS80TSX2 variants, though verification of the internal diode configuration is mandatory. Cross-manufacturer replacements require matching the 1200V/80A ratings and TO-247N package dimensions while ensuring equivalent short-circuit withstand capabilities.