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The RGS80TSX2DHRC11 is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by ROHM Semiconductor, utilizing Trench Field Stop technology. It features a collector-emitter breakdown voltage of 1200 V and a continuous collector current rating of 80 A at 25°C. The device operates within a junction temperature range of -40°C to +175°C and dissipates up to 555 W of power. Packaged in a TO-247N-3 through-hole configuration, it includes an AEC-Q101 qualification for automotive reliability standards.
Verify the specific suffix DHR against official datasheets to confirm pinout and electrical characteristics match design requirements. Confirm RoHS compliance status via manufacturer documentation before integration. Ensure thermal management solutions support the 555 W dissipation rating under expected load conditions.
Select this component for applications requiring high voltage blocking capability and robust short-circuit tolerance. Compare saturation voltage and switching times against system efficiency targets. Consider the TO-247N package constraints for PCB layout and heatsinking requirements relative to available space.
This part belongs to the RGS series of field stop trench IGBTs designed for automotive and industrial use. It shares the series' focus on low conduction losses and high reliability. The model distinguishes itself through its specific 1200V rating and 80A current capacity within the TO-247N form factor.
Check for direct cross-references from other manufacturers offering identical 1200V/80A TO-247N trench IGBTs with matching AEC-Q101 certification. Verify pin compatibility and thermal resistance values before substitution.