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The RGSX5TS65EHRC11 is a single N-channel IGBT from ROHM Semiconductor, utilizing field stop trench technology. It features an 8µs short-circuit tolerance and is qualified to AEC-Q101 for automotive applications. The device has a maximum collector-emitter voltage of 650V and a continuous collector current of 114A at 25°C. It includes a built-in fast recovery diode with a reverse recovery time of 143ns. Key electrical parameters include a saturation voltage of 2.15V at 100A/15V, gate charge of 279nC, and power dissipation of 404W in a TO-247N package.
Verify the specific suffix against official documentation to confirm pinout and internal configuration. Ensure the component meets AEC-Q101 requirements for the target automotive environment. Confirm thermal management capabilities align with the 404W dissipation rating in the TO-247N package.
Select this component when an integrated freewheeling diode is required alongside high short-circuit tolerance. Compare the 2.15V saturation voltage and 114A current rating against system load requirements. Consider the 8µs fault protection window for driver circuit timing adjustments.
This part belongs to the RGS series of field stop trench IGBTs designed for automotive power electronics. It complements other variants in the lineup by offering a balance of high current capacity and integrated diode functionality, targeting high-volume automotive manufacturing standards.
Check for direct substitutes within the RGS series that may offer different current ratings or packaging options while maintaining AEC-Q101 compliance and similar electrical characteristics.