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The RGT20TM65DGC9 is a trench field-stop IGBT from ROHM Semiconductor, packaged in TO-220NFM. It features a collector-emitter voltage (Vces) of 650V and a continuous collector current (Ic) of 13A at 100°C. The device includes a built-in fast recovery diode with a typical reverse recovery time (trr) of 65ns. Key electrical parameters include a saturation voltage (Vce(sat)) of 1.65V typ., a short-circuit withstand time (tsc) of 5µs min., and a power dissipation (Pd) of 47W. The storage temperature range spans from -55°C to 175°C.
Verify the specific ordering suffix GC9 against official datasheets to ensure correct packaging and lead-free plating specifications. Confirm RoHS compliance status directly with the manufacturer or authorized distributors before procurement. Check for any product change notifications that may affect pinout or material composition.
Select this component for designs requiring a balance of low conduction loss and high short-circuit ruggedness. Ensure the thermal management solution supports the 47W power dissipation rating within the specified junction temperature limits. Verify gate drive compatibility with the standard 15V operating voltage.
This part belongs to the RGT series of trench field-stop IGBTs designed for inverter applications. It shares architectural similarities with other models in the family but is distinguished by its specific current and voltage ratings. The TO-220NFM package provides a standardized mounting interface for through-hole assembly.
Direct substitutes within the same series include RGT30TM65DGC9 and RGT40TM65DGC9, which offer higher current ratings. Lower current alternatives like RGT15TM65DGC9 may be considered if space constraints exist. Always verify pinout and thermal characteristics when cross-referencing.