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The RGT30NS65DGC9 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by ROHM Semiconductor. It utilizes trench field-stop technology and is housed in a TO-220NFM-3 through-hole package. The device supports a maximum collector-emitter voltage of 650 V and delivers a continuous collector current of 17 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 2.1 V, a gate-emitter leakage current of 200 nA, and a power dissipation rating of 39 W. It operates within a junction temperature range of -40°C to +175°C.
Verify the specific suffix 'GC9' against official datasheets to confirm the TO-220NFM-3 tube packaging configuration. Ensure compatibility with standard through-hole mounting processes. Confirm RoHS compliance status via the manufacturer's latest documentation before integration into production lines.
Select this component when a 650V IGBT with integrated FRD is required for high-efficiency applications. The 17A continuous current rating suits moderate power levels. Verify thermal management requirements align with the 39W dissipation limit in the TO-220NFM-3 package for reliable operation under expected load conditions.
This part belongs to the RGT30 series of trench field-stop IGBTs from ROHM. The series is engineered for inverter applications requiring short-circuit tolerance and low switching losses. The GC9 suffix specifically denotes the tube packaging variant suitable for automated assembly equipment.
Direct substitutes may include other 650V 17A trench IGBTs in TO-220 packages from manufacturers like Infineon or Mitsubishi. Verify pinout compatibility and ensure equivalent Vce(sat) and switching speed parameters match the original design specifications.