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The RGT40NL65DGTL is a single N-channel IGBT from ROHM Semiconductor, utilizing field stop trench technology in an LPDL (TO-263L) package. It features a collector-emitter breakdown voltage of 650 V and a continuous collector current of 20 A at 100°C. The typical collector-emitter saturation voltage is 1.65 V, with a maximum power dissipation of 161 W. It includes a built-in fast recovery diode and supports a short-circuit withstand time of 5 µs. Operating temperatures range from -55°C to 175°C storage.
Verify the NRND status before design implementation. Confirm RoHS compliance and lead plating specifications. Check for alternative packages if surface mount availability is critical. Ensure thermal management meets the 161 W dissipation requirement.
Select based on 650V blocking capability and 20A current rating. Consider the LPDL package for surface mount assembly. Evaluate thermal resistance against the 161 W power dissipation limit. Verify compatibility with the integrated FRD characteristics for inductive load switching.
Part of the RGT series designed for inverter applications. Shares family traits like 5µs short-circuit tolerance and field stop trench technology. Differs from NS variants by package type and specific current ratings within the 650V class.
RGT40NL65D is the base part number without tape/reel packaging suffix. RGT40NS65DGTL offers similar electrical specs but in a TO-262-3 through-hole package. Verify pinout and thermal pad configurations for direct substitution.