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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 48A LPDS
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：48 A
- Current - Collector Pulsed (Icm)：75 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 25A
- Power - Max：194 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：49 nC
- Td (on/off) @ 25°C：27ns/88ns
- Test Condition：400V, 25A, 10Ohm, 15V
- Reverse Recovery Time (trr)：58 ns
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：LPDS
- Grade：-
- Qualification：-
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Overview
The RGT50NS65DGTL is a single-channel silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by ROHM Semiconductor. It utilizes a Field Stop Trench structure with an integrated Fast Recovery Diode (FRD). The device supports a collector-emitter voltage of 650 V and offers a short-circuit withstand time of 5 µs. Key electrical parameters include a maximum continuous collector current of 48 A at 25°C, a typical saturation voltage of 1.65 V at 100°C, and a power dissipation rating of 194 W. It operates within a temperature range of -40°C to +175°C and is housed in a TO-262-3 package.
Feature Summary
- Field Stop Trench IGBT technology for low saturation voltage and switching loss
- Integrated Very Fast & Soft Recovery FRD
- Short-circuit tolerance of 5 µs
Applications
- Inverter circuits
- Motor drives
- Power supplies
Procurement Notes
Verify the component status before procurement as it is designated as Not Recommended for New Designs (NRND). Confirm that the specific suffix 'GTL' corresponds to the required tape and reel packaging format. Ensure compatibility with existing designs rather than initiating new development projects using this obsolete part number.
Selection Notes
Select this component only for maintenance or replacement of existing equipment where the original design specified the RGT50NS65DGTL. Evaluate thermal management requirements given the 194 W power dissipation capability. Consider alternative modern IGBTs if redesigning the circuit to avoid obsolescence risks associated with discontinued components.
Part Context
This part belongs to the RGT series of ROHM's trench field-stop IGBTs. It is functionally similar to other variants like the RGT50TM65D but differs in packaging, utilizing the TO-262-3 form factor instead of through-hole tubes. The 'T' suffix indicates suitability for inverter applications requiring short-circuit protection.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. As the component is marked as Not Recommended for New Designs, engineers should consult ROHM Semiconductor directly for current equivalent recommendations or perform a full redesign with newer generation devices.
