RGT60TS65DGC11

RGT60TS65DGC11

$2.92
  • Description:IGBT TRENCH FS 650V 55A TO-247N
  • Series:-

SKU:35171372009d Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT TRENCH FS 650V 55A TO-247N
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tube,Tube
  • IGBT Type:Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max):650 V
  • Current - Collector (Ic) (Max):55 A
  • Current - Collector Pulsed (Icm):90 A
  • Vce(on) (Max) @ Vge, Ic:2.1V @ 15V, 30A
  • Power - Max:194 W
  • Switching Energy:-
  • Input Type:Standard
  • Gate Charge:58 nC
  • Td (on/off) @ 25°C:29ns/100ns
  • Test Condition:400V, 30A, 10Ohm, 15V
  • Reverse Recovery Time (trr):58 ns
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247N
  • Grade:-
  • Qualification:-

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RGT60TS65DGC11

Overview

The RGT60TS65DGC11 is a Field Stop Trench IGBT manufactured by ROHM Semiconductor, housed in a TO-247N package. It features a collector-emitter voltage (VCES) of 650V and a continuous collector current (IC) of 30A at 100°C case temperature. The typical collector-emitter saturation voltage (VCE(sat)) is 1.65V at IC=30A and VGE=15V. Power dissipation reaches 194W at TC=25°C. The device includes an integrated Fast Recovery Diode (FRD) with a pulsed forward current (IFP) of 90A. Short circuit withstand time is rated at 5μs.

Feature Summary

  • Low Collector-Emitter Saturation Voltage
  • Low Switching Loss
  • Short Circuit Withstand Time of 5μs
  • Built-in Very Fast & Soft Recovery FRD

Applications

  • General Inverter
  • UPS
  • Power Conditioner
  • Welder

Procurement Notes

Verify the component against the official ROHM datasheet specifications before integration. Confirm that the ordering suffix C11 corresponds to the tube packaging format containing 450 units per basic order. Ensure thermal management aligns with the specified junction temperature limits for reliable operation.

Selection Notes

Select this component for applications requiring high-speed switching and low conduction losses within a 650V system. Consider the 5μs short-circuit tolerance when designing protection circuits. Evaluate thermal resistance values to ensure adequate heat sinking for the intended power dissipation levels under varying case temperatures.

Part Context

This part belongs to the RGT series of Field Stop Trench IGBTs from ROHM. It is designed to eliminate the trade-off between low conduction loss and fast switching speed. The series utilizes trench gate technology to achieve soft switching characteristics, reducing voltage overshoot during turn-off transitions.

Replacement Considerations

Direct substitutes are not explicitly listed in the provided documentation. Verify compatibility with existing designs by comparing electrical parameters such as VCES, IC, and package dimensions with alternative ROHM IGBT models.

FAQ

What is the maximum short circuit withstand time for the RGT60TS65D?

The device has a short circuit withstand time of 5μs when the collector voltage is less than or equal to 360V.

Does the RGT60TS65D include a built-in diode?

Yes, it integrates a Fast Recovery Diode (FRD) with very fast and soft recovery characteristics.

What is the operating junction temperature range?

The operating junction temperature range is -40°C to +175°C.

RGT60TS65DGC11RGT60TS65DGC11
$2.92
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