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The RGT60TS65DGC11 is a Field Stop Trench IGBT manufactured by ROHM Semiconductor, housed in a TO-247N package. It features a collector-emitter voltage (VCES) of 650V and a continuous collector current (IC) of 30A at 100°C case temperature. The typical collector-emitter saturation voltage (VCE(sat)) is 1.65V at IC=30A and VGE=15V. Power dissipation reaches 194W at TC=25°C. The device includes an integrated Fast Recovery Diode (FRD) with a pulsed forward current (IFP) of 90A. Short circuit withstand time is rated at 5μs.
Verify the component against the official ROHM datasheet specifications before integration. Confirm that the ordering suffix C11 corresponds to the tube packaging format containing 450 units per basic order. Ensure thermal management aligns with the specified junction temperature limits for reliable operation.
Select this component for applications requiring high-speed switching and low conduction losses within a 650V system. Consider the 5μs short-circuit tolerance when designing protection circuits. Evaluate thermal resistance values to ensure adequate heat sinking for the intended power dissipation levels under varying case temperatures.
This part belongs to the RGT series of Field Stop Trench IGBTs from ROHM. It is designed to eliminate the trade-off between low conduction loss and fast switching speed. The series utilizes trench gate technology to achieve soft switching characteristics, reducing voltage overshoot during turn-off transitions.
Direct substitutes are not explicitly listed in the provided documentation. Verify compatibility with existing designs by comparing electrical parameters such as VCES, IC, and package dimensions with alternative ROHM IGBT models.
The device has a short circuit withstand time of 5μs when the collector voltage is less than or equal to 360V.
Yes, it integrates a Fast Recovery Diode (FRD) with very fast and soft recovery characteristics.
The operating junction temperature range is -40°C to +175°C.