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The RGT80TS65DGC13 is a Field Stop Trench IGBT with an integrated Fast Recovery Diode (FRD), designed for inverter applications requiring short-circuit tolerance. It features a 650V collector-emitter voltage rating and a 40A continuous collector current at 100°C. The device exhibits a typical saturation voltage of 1.65V and a reverse recovery time of 55ns. It supports a minimum short-circuit withstand time of 5µs, ensuring robustness under fault conditions. Packaged in TO-247GE, it offers a power dissipation capacity of 234W and operates within a storage temperature range of -55°C to 175°C.
Verify the specific ordering suffix GC13 against official ROHM documentation to confirm package type and compliance status. Confirm whether the component is available for new designs or restricted to existing customer support, as this affects long-term supply chain planning. Ensure that the procurement channel provides valid traceability for RoHS certification requirements.
Select this component when designing inverters that require high short-circuit ruggedness combined with low switching losses. The integrated FRD simplifies circuit topology by eliminating external diodes. Consider the thermal management requirements associated with the 234W power dissipation rating and the TO-247GE package dimensions during PCB layout.
This part belongs to the RGTS series of Field Stop Trench IGBTs from ROHM Semiconductor. The 'T' designation indicates suitability for inverter applications with specific short-circuit timing characteristics. It complements other devices in the family by offering a balance between switching speed and robustness for medium-power AC/DC and DC/AC conversion systems.
Check for direct substitutes within the RGTS series with matching voltage and current ratings. Verify pin compatibility and thermal resistance values before substituting. Ensure any replacement maintains the 5µs short-circuit withstand capability if required by the original design specifications.