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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 12A TO-252GE
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：12:00 AM
- Current - Collector Pulsed (Icm)：12:00 AM
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 4A
- Power - Max：62 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：13.5 nC
- Td (on/off) @ 25°C：17ns/69ns
- Test Condition：400V, 4A, 50Ohm, 15V
- Reverse Recovery Time (trr)：40 ns
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package：TO-252GE
- Grade：-
- Qualification：-
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Overview
The RGT8BM65DGTL1 is a single Field Stop Trench IGBT manufactured by ROHM Semiconductor, designed for high-efficiency power switching applications. It features an integrated Fast Recovery Diode (FRD) and supports a short-circuit tolerance of 5 microseconds. The device operates with a collector-emitter voltage of 650V and a continuous collector current of 8A at 25°C. Key electrical parameters include a maximum collector-emitter saturation voltage of 2.1V, a gate-emitter voltage limit of 30V, and a power dissipation rating of 94W. It functions within a temperature range of -40°C to +175°C and is housed in a TO-252-3 surface-mount package.
Feature Summary
- Field Stop Trench IGBT technology providing low saturation voltage and reduced switching losses
- Integrated FRD offering very fast and soft recovery characteristics
- Robust 5µs short-circuit withstand time suitable for inverter protection
Applications
- Inverter circuits requiring high reliability and short-circuit tolerance
- AC/DC and DC/DC converters utilizing surface-mount packaging
- General-purpose power switching systems operating at 650V
Procurement Notes
Verify the exact suffix against official ROHM documentation to confirm tape-and-reel specifications. Ensure compatibility with standard SMD reflow profiles for TO-252 packages. Confirm RoHS compliance status through the manufacturer's latest datasheet before integration into regulated designs.
Selection Notes
Select this component for designs requiring a balance of 8A current handling and 650V blocking capability in a compact form factor. The built-in FRD simplifies circuit topology by eliminating external diodes. Verify thermal management requirements given the 94W dissipation rating and ensure gate drive voltages remain within the specified 30V limit.
Part Context
This part belongs to the RGT series of Field Stop Trench IGBTs from ROHM, which are engineered for improved efficiency in power conversion. The BM variant specifically denotes the TO-252 package configuration with integrated diode functionality, distinguishing it from other series members like the NL or NS variants that utilize different casing styles.
Replacement Considerations
Direct substitutes may include the RGT8BM65D without the specific reel suffix if packaging flexibility is permitted. Cross-reference electrical limits such as Vceo and Ic with competitors like Infineon or Mitsubishi, ensuring package pinouts match exactly for board-level replacement.
