RGT8NS65DGTL

$1.73

Description：IGBT TRENCH FS 650V 8A LPDS
Series：-

SKU:e92697b6b792 Category: Single IGBTs Brand: Rohm Semiconductor

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 650V 8A LPDS
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：8:00 AM
Current - Collector Pulsed (Icm)：12:00 AM
Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 4A
Power - Max：65 W
Switching Energy：-
Input Type：Standard
Gate Charge：13.5 nC
Td (on/off) @ 25°C：17ns/69ns
Test Condition：400V, 4A, 50Ohm, 15V
Reverse Recovery Time (trr)：40 ns
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package：LPDS
Grade：-
Qualification：-

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RGT8NS65DGTL

Overview

The RGT8NS65DGTL is a single N-channel Field Stop Trench IGBT manufactured by ROHM Semiconductor. It features an integrated Fast Recovery Diode (FRD) and operates within a junction temperature range of -40°C to +175°C. The device supports a collector-emitter voltage of 650V, with a continuous collector current of 8A at 25°C case temperature and 4A at 100°C. Typical saturation voltage is 1.65V at 4A. Power dissipation reaches 65W at 25°C. It utilizes the LPDS (TO-262) package and offers a short-circuit withstand time of 5μs.

Feature Summary

Field Stop Trench structure for low saturation voltage and switching loss
Integrated Very Fast & Soft Recovery FRD
Short circuit withstand capability of 5 microseconds
Lead-free plating compliant with RoHS standards

Applications

General inverters
Uninterruptible power supplies (UPS)
Power conditioners
Welding equipment

Procurement Notes

Verify the specific ordering suffix 'GTL' against the official datasheet to confirm packaging type, as suffixes determine tape-and-reel specifications. Ensure the component matches the required LPDS/TO-262 footprint and thermal characteristics for your design. Confirm availability status directly with the manufacturer or authorized distributors, as production lifecycles may change.

Selection Notes

Select this component for applications requiring robust short-circuit tolerance up to 5μs. Consider the 650V rating and 8A continuous current capacity at lower case temperatures. Evaluate thermal resistance values for heat sink sizing. Verify that the gate drive requirements align with the specified threshold and charge parameters for optimal switching performance.

Part Context

This part belongs to the RGT8NS65D series of Field Stop Trench IGBTs from ROHM. It is designed for high-efficiency power switching in inverter and converter topologies. The series integrates a fast recovery diode to simplify circuit design and improve overall system efficiency compared to discrete solutions.

Replacement Considerations

Check for direct replacements within the same RGT series family. Verify pinout compatibility and electrical parameter equivalence before substitution. Consult ROHM documentation for any recommended upgrades or alternative packages offering similar performance metrics.