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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 40A TO-247N
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：40 A
- Current - Collector Pulsed (Icm)：80 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 20A
- Power - Max：144 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：40 nC
- Td (on/off) @ 25°C：22ns/73ns
- Test Condition：400V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr)：58 ns
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247N
- Grade：-
- Qualification：-
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Overview
The RGTH40TS65DGC11 is a single-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by ROHM Semiconductor, utilizing silicon technology and housed in a TO-247-3 through-hole package. This component belongs to the RGTH series and features a trench field-stop structure with an integrated fast recovery diode. It supports a maximum collector-emitter voltage of 650 V and delivers a continuous collector current of 40 A at 25°C. The device exhibits a typical collector-emitter saturation voltage of 1.6 V and handles up to 144 W of power dissipation. It operates within a junction temperature range of -40°C to +175°C.
Feature Summary
- Trench field-stop technology for low saturation voltage and high-speed switching
- Integrated fast recovery freewheeling diode with soft recovery characteristics
- Designed for robust performance in high-power inverter applications
Applications
- Power Factor Correction (PFC) circuits
- Solar inverters and photovoltaic systems
- Uninterruptible Power Supplies (UPS)
- Industrial welding equipment
- Induction heating appliances
Procurement Notes
Verify the specific suffix 'D' against the requested part number, as official records list 'RGTH40TS65GC11' without it. Confirm the lifecycle status, as related models are marked NRND. Ensure compatibility with TO-247-3 mounting requirements and validate RoHS compliance documentation before procurement.
Selection Notes
Select this IGBT for designs requiring 650V blocking capability and 40A continuous current handling. The integrated FRD simplifies circuit topology by eliminating external diodes. Consider thermal management solutions capable of dissipating 144W to maintain junction temperatures within the specified -40°C to +175°C operational range.
Part Context
This component is part of the ROHM RGTH series, which focuses on high-efficiency switching for industrial and consumer power electronics. The series utilizes trench gate technology to minimize conduction losses while maintaining fast switching speeds suitable for high-frequency inverter operations.
Replacement Considerations
Direct substitutes include other ROHM 650V 40A trench IGBTs in TO-247 packages, such as the RGT40TS65D or RGW80TS65D, provided pinout and thermal characteristics match.
