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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 40A TO-247N
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：40 A
- Current - Collector Pulsed (Icm)：80 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 20A
- Power - Max：144 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：40 nC
- Td (on/off) @ 25°C：22ns/73ns
- Test Condition：400V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247N
- Grade：-
- Qualification：-
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Overview
The RGTH40TS65GC11 is a single silicon Insulated Gate Bipolar Transistor (IGBT) from the ROHM Semiconductor RGTH40TS65 series. It utilizes Stop Trench technology and is housed in a TO-247-3 through-hole package. The device supports a maximum collector-emitter voltage of 650 V and delivers a continuous collector current of 40 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.6 V, a gate-emitter voltage range of -30 V to 30 V, and a power dissipation capacity of 144 W. It operates within a temperature range of -40°C to +175°C with a leakage current of 200 nA.
Feature Summary
- Stop Trench structure for optimized switching performance
- High thermal stability up to 175°C junction temperature
- Robust single configuration for standard circuit integration
Applications
- General purpose industrial power supplies
- Uninterruptible Power Supply (UPS) systems
- Inverter circuits for motor drives
Procurement Notes
Verify component authenticity against official ROHM Semiconductor documentation before implementation. Confirm that the specific lot codes match the required specifications for your design. Note that this part carries an NRND status, indicating it is not recommended for new designs; ensure long-term availability risks are assessed prior to final procurement decisions.
Selection Notes
Select this component when a 650V IGBT with 40A continuous current capability is required in a TO-247-3 package. Consider the 1.6V saturation voltage for conduction loss calculations. Evaluate the NRND status carefully, as end-of-life implications may affect future production runs compared to active series alternatives.
Part Context
This device belongs to the RGTH40TS65 family of high-speed switching IGBTs manufactured by ROHM Semiconductor. These components are designed for general-purpose applications requiring reliable performance in medium-power environments. The specific model integrates trench gate and field stop technologies to balance switching speed and conduction efficiency.
Replacement Considerations
Consult official ROHM cross-reference guides for direct replacements. Verify pinout compatibility and thermal characteristics if substituting with other TO-247-3 IGBTs. Ensure any alternative maintains the 650V rating and similar current handling capabilities.
