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The RGTH60TS65GC11 is a single IGBT transistor from ROHM Semiconductor, utilizing Trench Field Stop technology. It features a collector-emitter breakdown voltage of 650 V and a continuous collector current of 60 A at 25°C. The device has a maximum power dissipation of 178 W and operates within a junction temperature range of -40°C to +175°C. Packaged in a TO-247N-3 through-hole housing, it exhibits a typical collector-emitter saturation voltage of 1.5 V and a reverse recovery time of 35 ns.
Verify the specific suffix GC11 against official ROHM documentation to confirm pinout and packaging details. Ensure the component meets RoHS compliance requirements for your assembly process. Cross-reference the datasheet revision date to validate electrical parameters before integration into final designs.
Select this component for applications requiring fast switching speeds and low conduction losses. Compare the 60 A current rating and 178 W power dissipation against thermal management capabilities. Consider the TO-247N package size for board space constraints and mounting requirements.
This part belongs to the RGTH series of high-speed IGBTs designed for general-purpose industrial applications. It complements other ROHM devices like the RGW60TS65GC11, offering similar performance metrics in a standard through-hole package suitable for various power conversion topologies.
The RGW60TS65GC11 is a documented alternative with identical 650V/60A ratings and TO-247N packaging. Verify pin compatibility and slight variations in saturation voltage or switching times during substitution.