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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 31A TO-3PFM
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：31 A
- Current - Collector Pulsed (Icm)：160 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 40A
- Power - Max：66 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：79 nC
- Td (on/off) @ 25°C：34ns/120ns
- Test Condition：400V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr)：58 ns
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3PFM, SC-93-3
- Supplier Device Package：TO-3PFM
- Grade：-
- Qualification：-
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Overview
The RGTH80TK65DGC11 is a single N-channel IGBT from ROHM Semiconductor, utilizing Field Stop Trench technology. It features an integrated Fast Recovery Diode (FRD) and is housed in a TO-3PFM package for through-hole mounting. Key electrical parameters include a collector-emitter breakdown voltage of 650 V and a continuous collector current of 40 A at 100°C. The typical collector-emitter saturation voltage is 1.6 V, with a reverse recovery time of 47 ns. Power dissipation is rated at 66 W, operating within a junction temperature range of -55°C to 175°C.
Feature Summary
- High-speed switching capability with low collector-emitter saturation voltage
- Integrated very fast and soft recovery FRD for reduced switching loss
- Field Stop Trench structure for optimized performance
Applications
- Power Factor Correction (PFC) circuits
- Solar inverters
- Uninterruptible Power Supplies (UPS)
- Welding equipment
- Induction Heating (IH) appliances
Procurement Notes
Verify component authenticity by checking the manufacturer's marking code against official datasheets. Confirm RoHS compliance status and lead-free plating specifications before integration. Ensure thermal management design accommodates the specified power dissipation limits. Validate that the TO-3PFM package dimensions match the target PCB footprint requirements.
Selection Notes
Select this component for applications requiring high-speed switching and low conduction losses. Consider the 650V rating for medium-voltage AC/DC conversion systems. Evaluate the 40A current capacity against peak load requirements. Note that the integrated FRD simplifies circuit topology compared to discrete diode solutions.
Part Context
This part belongs to ROHM's TH series of high-speed switching IGBTs. It shares the Field Stop Trench architecture with other models in the lineup but differs in current handling and packaging. The RGTH80TK65DGC11 is specifically designed for efficient power conversion in industrial and consumer electronics.
Replacement Considerations
Check for direct pin-compatible substitutes within the same ROHM series. Verify that alternative components meet or exceed the 650V breakdown voltage and 40A current ratings. Ensure the replacement also includes an integrated FRD if the original circuit design relies on it.
