RGTH80TK65GC11

Overview

The RGTH80TK65GC11 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by ROHM Semiconductor. It utilizes Trench Field Stop technology and is housed in a TO-3PFM package for through-hole mounting. The device features a collector-emitter voltage of 650 V, a continuous collector current of 31 A at 25°C, and a power dissipation rating of 66 W. It operates within a temperature range of -40°C to +175°C.

Feature Summary

• Incorporates Trench Field Stop technology for optimized switching performance.
• Designed for high-voltage applications with robust thermal stability.

Applications

• Industrial motor drives
• Power supply units
• High-frequency inverters

Procurement Notes

Verify the specific suffix GC11 against official ROHM documentation to confirm packaging and compliance details. Ensure the procurement channel provides valid traceability for the TO-3PFM package. Cross-reference the datasheet for any recent product change notices affecting this specific part number before finalizing orders.

Selection Notes

Select this component when a 650V IGBT with 31A continuous current capability is required in a TO-3PFM form factor. Consider the 66W power dissipation limit and the -40°C to +175°C operating range for thermal management design. Verify gate-emitter leakage specifications against circuit requirements.

Part Context

This part belongs to ROHM's single IGBT lineup utilizing trench field stop architecture. It serves as a high-power switching element distinct from lower-current or different-package variants within the same voltage class. The TO-3PFM package distinguishes it from TO-247N or other through-hole options offered by the manufacturer.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult ROHM technical support for direct equivalents if this specific model is unavailable.