RGTV00TS65DGC11

Overview

The RGTV00TS65DGC11 is a single N-channel Trench Field Stop IGBT manufactured by ROHM Semiconductor. It features a TO-247N-3 through-hole package and operates with a collector-emitter voltage of 650 V. The device supports a continuous collector current of 95 A at 25°C, with a typical saturation voltage of 1.5 V and a maximum power dissipation of 276 W. It includes an integrated fast recovery diode and withstands short-circuit conditions for 2 µs.

Feature Summary

• Trench Field Stop technology for low saturation voltage
• Integrated fast recovery anti-parallel diode
• High short-circuit withstand capability of 2 µs

Applications

• Power Factor Correction (PFC)
• Solar Inverters
• Uninterruptible Power Supplies (UPS)
• Welding Equipment
• Induction Heating (IH)

Procurement Notes

Verify the specific suffix 'GC11' against official ROHM documentation to confirm pinout and thermal characteristics. Ensure the procurement channel provides genuine components from authorized sources. Confirm RoHS compliance status and lead times directly with suppliers prior to ordering.

Selection Notes

Select this component for medium-power inverter applications requiring high reliability. The 2 µs short-circuit rating allows for robust protection circuitry. Verify that the 95 A current rating meets peak load requirements and that the TO-247N package fits the thermal management design.

Part Context

This IGBT belongs to the TV series designed for inverter applications. It utilizes silicon technology and is housed in a standard TO-247N-3 package. The device is part of ROHM's lineup for general-purpose industrial power electronics.

Replacement Considerations

The RGTV00TS65DGC11 may be substituted with other ROHM TV series IGBTs sharing identical electrical ratings and the TO-247N-3 package form factor. Cross-reference datasheets to ensure compatibility with existing gate drive circuits and thermal constraints.