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The RGTV00TS65DGC13 is a Field Stop Trench IGBT manufactured by ROHM Semiconductor, housed in a TO-247GE package. It features a collector-emitter voltage (V_CES) of 650 V and a continuous collector current (I_C) of 50 A at 100°C. The device includes an integrated fast recovery diode with a reverse recovery time (t_rr) of approximately 55 ns. Key electrical parameters include a short-circuit withstand time of 2 µs, a typical saturation voltage (V_CE(sat)) of 1.95 V, and a maximum power dissipation of 276 W.
Verify the specific suffix 'GC13' to confirm tube packaging and RoHS compliance status. Ensure the procurement channel provides official ROHM documentation to validate the 2 µs short-circuit rating and 50 A current specifications against counterfeit or obsolete variants.
Select this component for applications requiring robust short-circuit protection and high efficiency. The 2 µs withstand time suits designs needing rapid fault response. Compare V_CE(sat) and switching losses against alternatives if thermal management constraints are tight.
This part belongs to ROHM's 650V Field Stop Trench IGBT series. It complements other models like RGT80TS65D but offers distinct short-circuit tolerance and current ratings tailored for modern inverter topologies requiring compact thermal solutions.
Direct substitutes may include RGTH00TS65DGC13 or similar 650V/50A Field Stop Trench IGBTs from ROHM, provided pinout and thermal characteristics match.