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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 95A TO-247N
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：95 A
- Current - Collector Pulsed (Icm)：200 A
- Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 50A
- Power - Max：276 W
- Switching Energy：1.17mJ (on), 940µJ (off)
- Input Type：Standard
- Gate Charge：104 nC
- Td (on/off) @ 25°C：41ns/142ns
- Test Condition：400V, 50A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247N
- Grade：-
- Qualification：-
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Overview
The RGTV00TS65GC11 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from ROHM Semiconductor, utilizing Field Stop Trench technology. It features a collector-emitter voltage rating of 650 V and a continuous collector current of 50 A at 100°C. The device offers a typical saturation voltage of 1.5 V and a turn-off time of 38 ns. Designed for high-speed switching with low loss, it includes a short-circuit withstand time of 2 µs. The component is housed in a TO-247N package with a maximum power dissipation of 276 W and operates within a junction temperature range of -40°C to +175°C.
Feature Summary
- Field Stop Trench structure for low saturation voltage and fast switching
- Short-circuit withstand capability of 2 microseconds
- Soft switching characteristics to reduce voltage overshoot
Applications
- Power Factor Correction (PFC) circuits
- Solar inverters
- Uninterruptible Power Supplies (UPS)
- Welding equipment
- Induction Heating (IH)
Procurement Notes
Verify the specific ordering suffix GC11 against the manufacturer's latest datasheet to confirm pinout and packaging details. Confirm RoHS compliance status as required by project specifications. Check for any design life notices or obsolescence warnings prior to final procurement decisions.
Selection Notes
Select this IGBT for applications requiring a balance between low conduction loss and high-speed switching performance. Ensure the gate driver can support the specified turn-off time and that the thermal management system handles the 276 W power dissipation limit under worst-case operating conditions.
Part Context
This component belongs to the RGTV series, which is optimized for inverter applications with a 2 µs short-circuit tolerance. It is part of ROHM's standard-grade product line, distinct from automotive-specific grades. The series aims to resolve conflicts between low on-state voltage and fast switching speeds.
Replacement Considerations
Direct substitutes must match the 650V/50A rating, TO-247N package, and 2 µs short-circuit tolerance. Verify electrical parameters such as Vce(sat) and tf against the original datasheet to ensure circuit compatibility.
