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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 33A TO-3PFM
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：33 A
- Current - Collector Pulsed (Icm)：120 A
- Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 30A
- Power - Max：76 W
- Switching Energy：570µJ (on), 500µJ (off)
- Input Type：Standard
- Gate Charge：64 nC
- Td (on/off) @ 25°C：33ns/105ns
- Test Condition：400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3PFM, SC-93-3
- Supplier Device Package：TO-3PFM
- Grade：-
- Qualification：-
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Overview
The RGTV60TK65GVC11 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by ROHM Semiconductor. It utilizes Trench Field Stop technology and is housed in a TO-3PFM package for through-hole mounting. The device features a maximum collector-emitter voltage (VCEO) of 650 V and a continuous collector current (Ic) of 33 A at 25°C. Key electrical parameters include a typical collector-emitter saturation voltage (VCE(sat)) of 1.9 V, a power dissipation (Pd) of 76 W, and a gate-emitter leakage current of 200 nA. The component operates within a temperature range of -40°C to +175°C.
Feature Summary
- Trench Field Stop structure for optimized switching performance
- High-speed fast switching capability
- Low collector-emitter saturation voltage
- Robust thermal management via TO-3PFM package
Applications
- Industrial motor drives
- Uninterruptible Power Supplies (UPS)
- Inverter circuits
- Welding equipment
Procurement Notes
Verify the specific suffix 'C11' against the official datasheet to confirm tape-and-reel packaging configuration, as standard tube packaging may differ. Confirm RoHS compliance status directly with the supplier documentation. Ensure the procurement channel provides valid traceability for industrial-grade components. Check for any recent lifecycle notifications regarding this specific part number variant before finalizing orders.
Selection Notes
Select this IGBT for applications requiring high-voltage blocking capabilities up to 650 V and moderate current handling around 33 A. The TO-3PFM package is suitable for designs needing robust mechanical stability and efficient heat dissipation compared to smaller surface-mount options. Consider the 1.9 V saturation voltage for efficiency calculations in conduction-heavy scenarios. Evaluate the thermal resistance characteristics of the TO-3PFM package against your heatsink design requirements.
Part Context
This component belongs to ROHM's series of Trench Field Stop IGBTs, designed for general-purpose power switching applications. It complements other devices in the family that offer varying current ratings and package types, such as the TO-247N or smaller SMD packages. The series emphasizes low switching losses and high reliability for industrial and consumer electronics markets.
Replacement Considerations
Direct substitutes are not explicitly listed in the provided public data. Cross-reference with similar ROHM models like the RGW60TS65GC11 for pin-compatible alternatives, though current ratings and package types may differ. Verify electrical compatibility carefully when considering non-ROHM equivalents.
