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The RGTV60TS65DGC11 is a single IGBT from ROHM Semiconductor, utilizing Trench Field Stop technology. It features a collector-emitter breakdown voltage of 650 V and a continuous collector current of 60 A at 25 °C. The device has a maximum power dissipation of 194 W and operates within a junction temperature range of -40 °C to +175 °C. It includes an integrated fast recovery diode with a reverse recovery time of 58 ns. The component is housed in a TO-247N package with three pins for through-hole mounting.
Verify the exact part number against official ROHM documentation, as standard listings often reference similar models like RGTH or RGW series. Confirm RoHS compliance and lead-free status directly with the manufacturer or authorized distributors. Ensure the specific suffix matches the required automotive qualification standards before procurement.
Select this component for high-efficiency applications requiring robust short-circuit protection and low conduction losses. Compare the 60 A current rating and 650 V blocking voltage against system requirements. Evaluate thermal management needs based on the 194 W power dissipation limit in the TO-247N package.
This IGBT belongs to ROHM's automotive-grade trench field stop series, designed for high-power density applications. It complements other variants in the RGTH and RGS families, offering optimized switching characteristics and reliability for electric mobility and industrial power conversion systems.
Direct substitutes include the RGTH60TS65DGC11 and RGW60TS65DGC11. Verify pinout compatibility and electrical parameters such as Vce(sat) and trr before substitution. Ensure the replacement meets the same automotive qualification standards if used in vehicle applications.