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The RGTV60TS65DGC13 is a trench field stop IGBT from ROHM Semiconductor, packaged in TO-247N. It features a 650V collector-emitter breakdown voltage and a continuous collector current of 30A at 100°C. The device includes a built-in fast recovery diode (FRD) with a typical reverse recovery time of 2µs. Key electrical parameters include a minimum breakdown voltage of 650V, a typical saturation voltage of 1.9V, and a short-circuit withstand time of 2µs. The component operates within a storage temperature range of -55°C to 175°C.
Verify the specific suffix GC13 against official datasheets to confirm package type and lead-free plating compliance. Ensure design-in status aligns with current production recommendations, as some variants may be obsolete or restricted for new designs. Cross-reference thermal resistance values with actual mounting conditions to validate power dissipation limits during procurement planning.
Select this component when a balance of moderate current handling and fast switching speed is required for 650V applications. The integrated FRD simplifies circuit design by eliminating external diode requirements. Consider the 2µs short-circuit tolerance for robust protection schemes. Compare saturation voltage characteristics against higher-current alternatives if thermal management is a primary constraint.
This part belongs to ROHM's RGTV series of trench field stop IGBTs designed for general-purpose industrial and consumer applications. It complements other series like RGT and RGW by offering specific short-circuit timing and packaging options. The TO-247N package provides efficient heat dissipation for through-hole mounting in medium-power converters.
Publicly confirmed substitute part numbers are not available in the provided source material. Designers should consult official ROHM selection guides for direct replacements or evaluate similar trench field stop IGBTs with matching voltage and current ratings.