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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 111A TO-247N
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：111 A
- Current - Collector Pulsed (Icm)：240 A
- Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 60A
- Power - Max：319 W
- Switching Energy：2.08mJ (on), 1.15mJ (off)
- Input Type：Standard
- Gate Charge：123 nC
- Td (on/off) @ 25°C：49ns/150ns
- Test Condition：400V, 60A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247N
- Grade：-
- Qualification：-
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Overview
The RGTVX2TS65DGC11 is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Rohm Semiconductor, utilizing Trench Field Stop technology. It features a collector-emitter breakdown voltage of 650 V and a continuous collector current of 111 A at 25°C. The device operates within a junction temperature range of -40°C to +175°C and has a maximum power dissipation of 319 W. Key electrical parameters include a gate charge of 123 nC and a saturation voltage of 1.9 V max at 15 V gate drive and 60 A collector current. Switching characteristics measured at 400 V, 60 A, and 10 Ω include a turn-on time of 49 ns and a turn-off time of 150 ns.
Feature Summary
- Trench Field Stop structure for optimized switching performance
- Integrated fast recovery diode with soft recovery characteristics
- High thermal stability supporting operation up to 175°C
Applications
- Industrial motor drives
- Power supply units
- General purpose inverters
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official datasheet to confirm pinout compatibility and packaging type before procurement. Ensure that the component status is reviewed, as availability may be subject to change or minimum order quantity restrictions depending on the distributor channel.
Selection Notes
Select this component for applications requiring high current handling in a TO-247N package. Evaluate the thermal resistance requirements against the 319 W dissipation rating. Confirm that the driver circuit can support the specified 15 V gate drive level to achieve the documented switching times and saturation voltage characteristics.
Part Context
This part belongs to the RGTV series of IGBTs from Rohm Semiconductor. The series is characterized by trench field stop technology designed to balance low conduction loss with fast switching capabilities. The TO-247N package provides a robust mechanical solution for through-hole mounting in industrial power electronics.
Replacement Considerations
Check for direct substitutes within the same RGTV family or other 650V 111A Trench Field Stop IGBTs from Rohm. Verify pin compatibility and thermal specifications when considering cross-manufacturer alternatives.
