SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The RGTVX2TS65DGC13 is a Field Stop Trench IGBT manufactured by ROHM Semiconductor, rated for 650V collector-emitter voltage and 60A continuous collector current at 100°C. It features a typical VCE(sat) of 1.5V and supports a pulsed collector current of 240A. The device includes an integrated fast recovery diode (FRD) and offers a short circuit withstand time of 2µs. Packaged in TO-247GE, it provides a power dissipation capacity of 319W at 25°C case temperature.
Verify the latest specifications directly with ROHM before implementation, as datasheet information is subject to change without notice. Confirm RoHS compliance status through official sales channels. Ensure derating characteristics are strictly followed during design to prevent malfunction or failure under varying thermal conditions.
Select this component for applications requiring high-speed switching and robust short-circuit protection. The integrated FRD simplifies circuit design for inverters and UPS systems. Evaluate thermal resistance values against the specific heatsink requirements to maintain junction temperatures within the specified -40°C to +175°C operating range.
This part belongs to the RGTVX series of Field Stop Trench IGBTs from ROHM. It is designed for general-purpose industrial applications where low conduction and switching losses are critical. The TO-247GE package facilitates efficient heat dissipation for medium-power conversion tasks.
No public substitute part numbers are confirmed in the provided documentation. Verify compatibility with existing gate drivers and thermal management solutions if considering alternative components from other manufacturers.
The device has a minimum short circuit withstand time of 2µs when VGE is 15V.
Yes, it features a built-in Very Fast & Soft Recovery Free Wheeling Diode (FRD).
The typical VCE(sat) is 1.5V at IC = 60A and VGE = 15V.