RGTVX2TS65DGC13

RGTVX2TS65DGC13

$6.11
  • Description:IGBT TRENCH FS 650V 111A TO247GE
  • Series:-

SKU:a1b449c36de7 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT TRENCH FS 650V 111A TO247GE
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tube
  • IGBT Type:Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max):650 V
  • Current - Collector (Ic) (Max):111 A
  • Current - Collector Pulsed (Icm):240 A
  • Vce(on) (Max) @ Vge, Ic:1.9V @ 15V, 60A
  • Power - Max:319 W
  • Switching Energy:2.08mJ (on), 1.15mJ (off)
  • Input Type:Standard
  • Gate Charge:123 nC
  • Td (on/off) @ 25°C:49ns/150ns
  • Test Condition:400V, 60A, 10Ohm, 15V
  • Reverse Recovery Time (trr):111 ns
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247GE
  • Grade:-
  • Qualification:-

Download product information

RGTVX2TS65DGC13

Overview

The RGTVX2TS65DGC13 is a Field Stop Trench IGBT manufactured by ROHM Semiconductor, rated for 650V collector-emitter voltage and 60A continuous collector current at 100°C. It features a typical VCE(sat) of 1.5V and supports a pulsed collector current of 240A. The device includes an integrated fast recovery diode (FRD) and offers a short circuit withstand time of 2µs. Packaged in TO-247GE, it provides a power dissipation capacity of 319W at 25°C case temperature.

Feature Summary

  • Low Collector-Emitter Saturation Voltage
  • High Speed Switching with Low Switching Loss
  • Short Circuit Withstand Time of 2µs
  • Built-in Very Fast & Soft Recovery FRD

Applications

  • Solar Inverter
  • UPS
  • Welding

Procurement Notes

Verify the latest specifications directly with ROHM before implementation, as datasheet information is subject to change without notice. Confirm RoHS compliance status through official sales channels. Ensure derating characteristics are strictly followed during design to prevent malfunction or failure under varying thermal conditions.

Selection Notes

Select this component for applications requiring high-speed switching and robust short-circuit protection. The integrated FRD simplifies circuit design for inverters and UPS systems. Evaluate thermal resistance values against the specific heatsink requirements to maintain junction temperatures within the specified -40°C to +175°C operating range.

Part Context

This part belongs to the RGTVX series of Field Stop Trench IGBTs from ROHM. It is designed for general-purpose industrial applications where low conduction and switching losses are critical. The TO-247GE package facilitates efficient heat dissipation for medium-power conversion tasks.

Replacement Considerations

No public substitute part numbers are confirmed in the provided documentation. Verify compatibility with existing gate drivers and thermal management solutions if considering alternative components from other manufacturers.

FAQ

What is the maximum short circuit withstand time for the RGTVX2TS65DGC13?

The device has a minimum short circuit withstand time of 2µs when VGE is 15V.

Does the RGTVX2TS65DGC13 include an internal diode?

Yes, it features a built-in Very Fast & Soft Recovery Free Wheeling Diode (FRD).

What is the typical collector-emitter saturation voltage at 25°C?

The typical VCE(sat) is 1.5V at IC = 60A and VGE = 15V.

RGTVX2TS65DGC13RGTVX2TS65DGC13
$6.11
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