SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The RGTVX2TS65GC13 is a single Field Stop Trench IGBT manufactured by ROHM Semiconductor. It features a collector-emitter voltage (VCES) of 650V and a continuous collector current (IC) of 60A at 100°C, with a pulsed current capability of 111A. The device operates within a junction temperature range of -40°C to +175°C and dissipates up to 319W at 25°C case temperature. Key electrical parameters include a typical VCE(sat) of 1.5V at 25°C and a short circuit withstand time of 2μs. It utilizes a TO-247GE package.
Verify the specific ordering suffix C13 against the latest official datasheet to confirm packaging details. Ensure thermal management designs account for the specified power dissipation limits and transient thermal impedance curves provided in the manufacturer documentation.
Select this component for applications requiring robust short-circuit tolerance and low switching losses. Consider the 2μs short circuit withstand time and the 650V rating when designing protection circuits for inverters or welding equipment operating under high stress conditions.
This part belongs to the RGTV series of Field Stop Trench IGBTs from ROHM. The series is characterized by optimized trade-offs between conduction and switching losses, making it suitable for general-purpose industrial power conversion applications where reliability under fault conditions is critical.
Publicly confirmed substitute part numbers are not available in the provided source material. Verify pinout compatibility and thermal resistance specifications before considering any alternative components from other manufacturers.