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The RGTVX6TS65GC11 is a trench field-stop IGBT manufactured by ROHM Semiconductor, designed for high-efficiency power conversion. It features a 650V collector-emitter breakdown voltage and an 80A continuous collector current at 100°C. The device exhibits a typical saturation voltage of 1.5V and a turn-off time of 34ns. It includes a built-in fast recovery diode with a reverse recovery time of 143ns. Key specifications include a short-circuit withstand time of 2µs, a maximum power dissipation of 277W, and operation within a junction temperature range of -40°C to +175°C. The component is housed in a TO-247N package.
Verify the complete part number including suffixes such as GC11 against official manufacturer documentation before ordering. Confirm that the specific revision matches design requirements, as manufacturing updates may occur without functional changes. Ensure compliance with RoHS directives and lead-free plating standards required for the target assembly process.
Select this component for applications requiring robust short-circuit tolerance alongside low switching losses. The integrated FRD simplifies circuit topology by eliminating external diodes. Evaluate thermal management capabilities carefully, as the 277W power dissipation rating necessitates adequate heatsinking. Verify gate drive compatibility with the specified voltage limits and switching speeds.
This device belongs to the RGTV series of trench field-stop IGBTs from ROHM Semiconductor. The series is engineered specifically for inverter applications where high efficiency and reliability are critical. The TO-247N packaging facilitates through-hole mounting, providing mechanical stability for industrial-grade power modules.
Direct substitutes must match the 650V rating, 80A current capacity, and 2µs short-circuit tolerance. Verify pinout compatibility and thermal resistance values. Cross-reference with other ROHM TV series parts or equivalent offerings from manufacturers like Infineon or Mitsubishi that support similar inverter topologies.