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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 45A TO-3PFM
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：45 A
- Current - Collector Pulsed (Icm)：200 A
- Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 50A
- Power - Max：89 W
- Switching Energy：1.18mJ (on), 960µJ (off)
- Input Type：Standard
- Gate Charge：141 nC
- Td (on/off) @ 25°C：52ns/180ns
- Test Condition：400V, 50A, 10Ohm, 15V
- Reverse Recovery Time (trr)：95 ns
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3PFM, SC-93-3
- Supplier Device Package：TO-3PFM
- Grade：-
- Qualification：-
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Overview
The RGW00TK65DGVC11 is a single-channel silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by ROHM Semiconductor. It utilizes Trench Field Stop technology and is housed in a TO-3PFM-3 through-hole package. The device supports a maximum collector-emitter voltage of 650 V and a continuous collector current of 45 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.9 V, a gate-emitter maximum voltage of 30 V, and a power dissipation rating of 89 W. The component operates within a temperature range of -40°C to +175°C junction temperature.
Feature Summary
- Trench Field Stop structure for optimized switching performance
- Integrated fast recovery characteristics suitable for high-speed applications
- Through-hole mounting configuration for robust mechanical stability
Applications
- Power Factor Correction (PFC) circuits
- Solar inverters
- Uninterruptible Power Supplies (UPS)
- Industrial welding equipment
- Induction heating systems
Procurement Notes
Verify the specific suffix DGVC11 against official ROHM documentation to confirm pinout and thermal specifications. Confirm RoHS compliance status via the manufacturer's latest datasheet. Ensure the ordering quantity aligns with the standard tube packaging requirements specified in the product data sheet.
Selection Notes
Select this component for designs requiring a 650V rated IGBT with moderate current handling capabilities. The TO-3PFM package necessitates appropriate heatsinking strategies due to its 89 W dissipation limit. Evaluate the 1.9 V saturation voltage against system efficiency targets and ensure gate drive voltages remain within the 30 V maximum rating.
Part Context
This part belongs to the ROHM RGW series of high-speed switching IGBTs. The series is characterized by low switching losses and soft switching capabilities. The TO-3PFM package variant provides a compact solution for industrial power electronics compared to larger through-hole packages.
Replacement Considerations
The RGW00TK65GVC11 is listed as a similar level alternative within the same series. Verify pin compatibility and exact electrical parameter tolerances before substitution.
