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The RGW00TS65DGC11 is a single N-channel IGBT from ROHM Semiconductor, utilizing Field Stop Trench technology. It features a collector-emitter breakdown voltage of 650 V and a continuous collector current of 25 A at 25°C. The device has a typical collector-emitter saturation voltage of 1.9 V and a power dissipation rating of 156 W. It operates within a junction temperature range of -40°C to +175°C and is housed in a TO-247N-3 through-hole package.
Verify the specific ordering suffix against the manufacturer's latest datasheet to confirm pinout and electrical tolerances. Ensure the component meets RoHS compliance requirements for your target market. Confirm availability status as distribution channels may vary. Check for any recent lifecycle changes or obsolescence notices directly from ROHM before finalizing procurement plans.
Select this component for applications requiring high efficiency and fast switching speeds. The 650V rating suits medium-voltage AC/DC conversion systems. Consider the thermal management capabilities required for the 156W dissipation rating in your enclosure design. Verify gate drive compatibility with the specified voltage limits.
This part belongs to the RGW series of high-speed IGBTs designed for efficient power conversion. The series eliminates the trade-off between low conduction loss and fast switching. It is widely used in modern power electronics where size reduction and energy efficiency are critical priorities.
Check for direct replacements within the ROHM RGW series with similar current ratings. Compare thermal resistance values if substituting with other manufacturers' TO-247 packages. Ensure equivalent switching times and saturation voltages to maintain circuit performance.