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The RGW00TS65GC13 is a single N-channel Field Stop Trench IGBT manufactured by ROHM Semiconductor. It features a TO-247GE-3 package designed for through-hole mounting. The device supports a maximum collector-emitter voltage (VCEO) of 650 V and a continuous collector current (Ic) of 85 A at 25°C. Typical collector-emitter saturation voltage is 1.5 V, with a maximum gate-emitter voltage of ±30 V. Power dissipation reaches 277 W, operating within a temperature range of -40°C to +175°C.
Verify the specific suffix GC13 against official datasheets to confirm tube packaging and RoHS compliance status. Ensure the ordering part number matches the exact electrical specifications required for the target circuit design before procurement.
Select this component when high current handling up to 85 A is required alongside low conduction losses. The TO-247GE package facilitates effective thermal management for high-power density designs. Verify that the 650 V rating aligns with the system's DC bus voltage requirements.
This model belongs to the RGW series of high-speed switching IGBTs from ROHM. The series is engineered to balance low conduction loss with fast switching speeds, addressing the traditional trade-off in power semiconductors. It utilizes field stop trench technology for improved efficiency.
Direct substitutes may include other ROHM 650V 85A IGBTs in TO-247 packages, such as the RGTV00TS65GC11 or RGTH00TS65GC13, provided pinouts and thermal characteristics are compatible. Always verify replacement compatibility with official manufacturer cross-reference data.