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The RGW00TS65HRC11 is a field stop trench IGBT manufactured by ROHM Semiconductor, designed for high-speed switching applications. It features a 650V collector-emitter voltage rating and a continuous collector current of 50A at 100°C. The device utilizes N-channel technology in a TO-247N package with through-hole mounting. Key electrical parameters include a maximum power dissipation of 254W, a typical collector-emitter saturation voltage of 1.5V, and a turn-off time of 37ns. It operates within a temperature range of -55°C to 175°C storage and supports AEC-Q101 automotive standards.
Verify the specific suffix 'C11' against the official datasheet to confirm packaging and tape-and-reel specifications. Confirm RoHS compliance status and lead times directly with authorized distributors or ROHM Semiconductor before ordering. Ensure the procurement channel provides valid traceability documentation for automotive-grade components.
Select this component when designing systems requiring both low saturation voltage and fast switching speeds, such as resonant converters. Compare the 50A current rating and 650V blocking voltage against system requirements. Consider the TO-247N package thermal resistance for heatsinking design. Verify that the 37ns turn-off time meets the switching frequency demands of the target application.
This part belongs to the RGW series of field stop trench IGBTs from ROHM Semiconductor. The series is characterized by eliminating the trade-off between low conduction loss and high-speed switching. It is distinct from the RGS series, which focuses on short-circuit tolerance, and the RGH series, which targets higher voltage ratings.
Direct replacements must match the 650V rating, 50A current capacity, and TO-247N package. Verify pinout compatibility and thermal characteristics. Check if alternative parts offer similar AEC-Q101 certification if automotive qualification is required. Review datasheets for differences in gate charge and switching times.