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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 48A TO-263L
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：48 A
- Current - Collector Pulsed (Icm)：80 A
- Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 20A
- Power - Max：144 W
- Switching Energy：110µJ (on), 160µJ (off)
- Input Type：Standard
- Gate Charge：59 nC
- Td (on/off) @ 25°C：33ns/129ns
- Test Condition：400V, 10A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：TO-263L
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The RGW40NL65HRBTL is a high-speed fast switching Insulated Gate Bipolar Transistor (IGBT) manufactured by ROHM Semiconductor. It utilizes a Field Stop Trench structure within an LPDL (TO-263-3) package, designed for automotive applications and compliant with AEC-Q101 standards. The device features a collector-emitter voltage rating of 650 V and a continuous collector current of 40 A at 100°C. Typical saturation voltage is 1.5 V, with a turn-off time of approximately 37 ns. Power dissipation reaches 227 W, operating between -55°C and 175°C storage temperatures.
Feature Summary
- AEC-Q101 qualified for automotive reliability
- Low collector-emitter saturation voltage
- Low switching loss with soft switching capability
Applications
- On-board chargers
- Off-board chargers
- DC-DC converters
- Power Factor Correction (PFC)
- Industrial inverters
Procurement Notes
Verify the specific suffix against official datasheets to confirm packaging type and tape specifications. Confirm RoHS compliance status directly from the manufacturer's documentation before integration. Ensure the component meets all required automotive qualification standards for the target application environment.
Selection Notes
Select this component when low saturation voltage and fast switching are critical for efficiency in power conversion circuits. The LPDL package facilitates surface mount assembly. Verify thermal management requirements align with the 227 W power dissipation rating under expected operating conditions.
Part Context
This part belongs to the RGW series of high-speed IGBTs from ROHM Semiconductor. The series is characterized by eliminating the trade-off between low conduction loss and high-speed switching. It shares architectural similarities with other automotive-grade trench field-stop devices in the manufacturer's portfolio.
Replacement Considerations
Direct substitutes include the RGW80NL65HRB for higher current capacity within the same package and electrical family. Evaluate pin compatibility and thermal characteristics when considering alternative models.
