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The RGW40TS65DGC13 is a Field Stop Trench IGBT manufactured by Rohm Semiconductor, packaged in TO-247N. It features an integrated Fast Recovery Diode (FRD). Key electrical parameters include a collector-emitter breakdown voltage of 650V and a continuous collector current of 20A at 100°C. The typical collector-emitter saturation voltage is 1.5V at 25°C. Power dissipation is rated at 136W at 25°C case temperature. The device supports an operating junction temperature range from -40°C to +175°C.
Verify the specific ordering suffix against official Rohm documentation to confirm packaging details. Confirm RoHS compliance status and lead-free plating specifications directly with the manufacturer or authorized distributors before procurement.
Select this component for designs requiring high-speed switching and low conduction losses. Ensure thermal management accommodates the specified power dissipation limits. Verify gate drive voltage requirements to prevent thermal runaway conditions below recommended thresholds.
This part belongs to the ROHM RGW series of Field Stop Trench IGBTs. These devices are engineered for general-purpose power conversion applications. The series emphasizes efficiency through reduced switching losses and improved soft recovery characteristics of the built-in diode.
Consult official Rohm substitution guides for verified alternatives. Cross-referencing requires matching voltage ratings, current capabilities, and package dimensions to ensure functional compatibility without circuit redesign.
The maximum operating junction temperature is +175°C.
Yes, the device features lead-free lead plating and is RoHS compliant.
The typical VCE(sat) is 1.5V at a junction temperature of 25°C.