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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 40A TO-247N
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：40 A
- Current - Collector Pulsed (Icm)：80 A
- Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 20A
- Power - Max：136 W
- Switching Energy：330µJ (on), 300µJ (off)
- Input Type：Standard
- Gate Charge：59 nC
- Td (on/off) @ 25°C：33ns/76ns
- Test Condition：400V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247N
- Grade：-
- Qualification：-
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Overview
The RGW40TS65GC11 is a single silicon IGBT from the ROHM W series, designed for high-speed fast switching applications. It utilizes a trench field-stop structure and is housed in a TO-3PFM package with through-hole mounting. The device supports a collector-emitter voltage of 650 V and a continuous collector current of 20 A at 25°C. Key electrical parameters include a typical collector-emitter saturation voltage of 1.5 V and a turn-off time of 63 ns. It operates within a temperature range of -55°C to 175°C storage and complies with RoHS standards.
Feature Summary
- High-speed switching capability via trench field-stop technology
- Low collector-emitter saturation voltage for efficiency
- Integrated soft recovery characteristics to minimize switching loss
Applications
- Power Factor Correction (PFC) circuits
- Solar inverters
- Uninterruptible Power Supplies (UPS)
- Industrial welding equipment
- Induction heating systems
Procurement Notes
Verify the specific suffix GC11 against the official datasheet to confirm pinout and packaging details. Confirm that the component meets the required automotive or industrial qualification standards if applicable, as standard versions may not be suitable for all environments. Check for end-of-life status before finalizing designs.
Selection Notes
Select this component when low saturation voltage and fast switching are prioritized over high current capacity. Ensure the thermal management design accommodates the power dissipation limits defined in the datasheet. Compare the 20A rating against peak load requirements to prevent overstress during transient conditions.
Part Context
This part belongs to the RGW series of high-speed IGBTs manufactured by ROHM Semiconductor. The series is characterized by its trench field-stop structure, which balances low conduction losses with fast switching speeds. It is distinct from higher-current variants like the RGWX series or lower-voltage options.
Replacement Considerations
Direct substitutes must match the 650V/20A rating and TO-3PFM package. Verify compatibility with existing gate drive voltages and thermal resistance values. Cross-reference with other ROHM W-series parts or equivalent offerings from manufacturers like Infineon or Mitsubishi that share similar trench field-stop architectures.
