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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 30A TO-3PFM
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：30 A
- Current - Collector Pulsed (Icm)：100 A
- Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 25A
- Power - Max：67 W
- Switching Energy：390µJ (on), 430µJ (off)
- Input Type：Standard
- Gate Charge：73 nC
- Td (on/off) @ 25°C：35ns/102ns
- Test Condition：400V, 25A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3PFM, SC-93-3
- Supplier Device Package：TO-3PFM
- Grade：-
- Qualification：-
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Overview
The RGW50TK65GVC11 is a Field Stop Trench IGBT manufactured by ROHM Semiconductor, designed for high-speed fast switching applications. It features an integrated Fast Recovery Diode (FRD) and utilizes silicon technology in a TO-3PFM-3 package with through-hole mounting. Key electrical parameters include a collector-emitter maximum voltage of 650 V, a continuous collector current of 39 A at 25°C, and a typical collector-emitter saturation voltage of 1.9 V. The device supports a power dissipation of 81 W and operates within a temperature range of -40°C to +175°C.
Feature Summary
- High-speed fast switching capability utilizing Field Stop Trench IGBT technology
- Integrated Fast Recovery Diode (FRD) for simplified circuit design
- Low collector-emitter saturation voltage for reduced conduction losses
Applications
- Power Factor Correction (PFC) circuits
- Solar inverters
- Uninterruptible Power Supplies (UPS)
- Industrial welding equipment
- Induction Heating (IH) systems
Procurement Notes
Verify the specific ordering suffix GVC11 against the manufacturer's latest datasheet to confirm pinout compatibility and RoHS compliance status. Ensure that the TO-3PFM-3 package dimensions match the target PCB footprint and thermal management requirements before finalizing procurement orders.
Selection Notes
Select this component when a single IGBT with an integrated FRD is required for high-efficiency switching applications. Compare the 1.9 V saturation voltage and 39 A current rating against system load requirements. Consider the TO-3PFM-3 package for through-hole assembly needs where higher current handling and robust mechanical mounting are prioritized over surface-mount density.
Part Context
This part belongs to the RGW series of high-speed fast switching IGBTs from ROHM Semiconductor. The series is characterized by the elimination of the trade-off between low conduction loss and high-speed switching, enabling soft switching operation. This specific model represents a standard-grade product suitable for general industrial and consumer electronics applications rather than automotive use.
Replacement Considerations
The RGW80TK65EGVC11 is a similar high-speed IGBT in the same package but offers different current ratings. Verify if the alternative part's saturation voltage and current capacity meet the specific circuit requirements before substitution.
