SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The RGW50TS65DGC11 is a single N-channel Field Stop Trench IGBT manufactured by ROHM Semiconductor. It features a TO-247N-3 through-hole package and operates with a maximum collector-emitter voltage of 650 V. The device supports a continuous collector current of 25 A at 25°C, with a peak rating of 50 A. Key electrical parameters include a typical collector-emitter saturation voltage of 1.9 V and a maximum power dissipation of 156 W. The component functions within a junction temperature range of -40°C to +175°C and includes an integrated anti-parallel diode.
Verify the Not Recommended for New Design (NRND) status before integration into new products. Confirm RoHS compliance and lead-free plating specifications against current regulatory requirements. Ensure thermal management designs account for the 156 W power dissipation limit in the TO-247N-3 package. Validate that the application does not require automotive-grade certification, as this standard part is not intended for vehicle use.
Select this component for general-purpose high-efficiency switching applications requiring 650 V blocking capability. The TO-247N-3 package suits through-hole mounting on industrial PCBs. Consider alternative models if automotive qualification or higher current ratings are necessary. Verify gate drive compatibility with the specified ±30 V maximum gate-emitter voltage limits.
This part belongs to the ROHM RGW series, designed to balance low conduction losses with high-speed switching characteristics. The series utilizes trench field stop technology to minimize the trade-off between saturation voltage and switching speed. This specific model represents a standard-grade discrete IGBT suitable for non-automotive industrial power electronics.
The RGW50TS65D is listed as an alias for this component. No other verified substitute part numbers are available in the provided documentation.