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The RGW50TS65DGC13 is a Field Stop Trench IGBT manufactured by ROHM Semiconductor. It features a TO-247N-3 through-hole package and operates with a maximum collector-emitter voltage of 650 V. The device supports a continuous collector current of 50 A at 25°C, with a typical collector-emitter saturation voltage of 1.9 V. Maximum power dissipation is rated at 156 W. The component functions within a temperature range of -40°C to +175°C and includes a gate-emitter leakage current of 200 nA.
Verify the specific suffix 'GC13' against official datasheets, as the provided reference data lists 'RGW50TS65DGC11'. Confirm RoHS compliance status and lead times directly with the manufacturer or authorized distributors. Ensure the procurement channel provides valid traceability documentation for automotive-grade components.
Select this component for applications requiring high-speed switching and low conduction losses in 650 V systems. Consider the TO-247N-3 package for thermal management needs up to 156 W. Verify that the 50 A current rating aligns with the specific load requirements and operating temperature conditions of the target design.
This part belongs to the RGW series of Field Stop Trench IGBTs from ROHM Semiconductor. The series is designed to eliminate the trade-off between low conduction loss and fast switching speed. These devices are engineered for high efficiency and soft switching capabilities, reducing voltage overshoot during operation.
The RGW50TS65DGC11 is listed as an alias for this component family. Verify pinout compatibility and electrical parameter equivalence before substitution. No other direct public substitutes are confirmed in the available data.