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The RGW50TS65GC13 is a Field Stop Trench IGBT manufactured by ROHM Semiconductor, packaged in a TO-247N-3 configuration. It features a collector-emitter breakdown voltage (Vces) of 650 V and a continuous collector current (Ic) of 25 A at 100°C. The typical collector-emitter saturation voltage (Vce(sat)) is 1.5 V at 25°C and 1.9 V at 175°C. Power dissipation reaches 156 W at a case temperature of 25°C. The device operates within a junction temperature range of -40°C to +175°C.
Verify the specific ordering suffix against official documentation to confirm packaging details. Confirm that the component meets all required environmental compliance standards for the target application before finalizing procurement plans.
Select this component based on its 650V rating and 25A continuous current capability. Ensure thermal management design accommodates the specified power dissipation limits and junction temperature constraints for reliable operation.
This part belongs to the RGW series of high-speed switching IGBTs from ROHM. It utilizes trench gate field-stop technology to optimize switching performance and conduction losses for efficient power conversion applications.
Consult official substitution lists for verified alternatives. Generic replacements may not match the specific switching speed or saturation voltage characteristics required for the original circuit design.