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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 67A TO-263L
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：67 A
- Current - Collector Pulsed (Icm)：120 A
- Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 30A
- Power - Max：187 W
- Switching Energy：180µJ (on), 250µJ (off)
- Input Type：Standard
- Gate Charge：84 nC
- Td (on/off) @ 25°C：34ns/122ns
- Test Condition：400V, 15A, 10Ohm, 15V
- Reverse Recovery Time (trr)：96 ns
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：TO-263L
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The RGW60NL65DHRBTL is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by ROHM Semiconductor. It utilizes Field Stop Trench technology and Low Profile Direct Lead (LPDL) packaging in a TO-263L surface-mount configuration. The device features an integrated Fast Recovery Diode (FRD). Key electrical parameters include a maximum collector-emitter voltage of 650 V, a continuous collector current of 67 A at 25°C, and a collector-emitter saturation voltage of 1.9 V. Power dissipation is rated at 187 W, with an operating temperature range from -40°C to +175°C.
Feature Summary
- Field Stop Trench IGBT structure for high-speed switching performance
- Integrated Fast Recovery Diode (FRD)
- Low collector-emitter saturation voltage design
- Automotive-grade reliability compliant with AEC-Q101 standards
Applications
- On-board chargers for electric vehicles
- Off-board charging systems
- DC-DC converters
- Power Factor Correction (PFC) circuits
- Industrial inverters
Procurement Notes
Verify the specific suffix 'D' against the required datasheet revision, as it denotes the integrated FRD variant. Confirm that the TO-263L package matches the target PCB footprint. Ensure the supply chain source provides documentation confirming AEC-Q101 automotive qualification status. Check lead times due to potential manufacturing delays associated with automotive-grade components.
Selection Notes
Select this component when low conduction loss is critical for efficiency in power conversion applications. The 650V rating suits medium-voltage systems, while the 67A current capacity supports moderate power levels. The LPDL package offers thermal advantages over standard TO-263 variants. Consider the integrated diode to simplify circuit design and reduce component count in synchronous or freewheeling configurations.
Part Context
This part belongs to ROHM's LPDL series of automotive IGBTs. It is designed specifically for harsh environments found in electric and hybrid vehicles. The series emphasizes compactness and thermal performance. It complements other ROHM discrete semiconductors used in power management modules for traction and auxiliary systems.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Cross-referencing requires matching voltage, current, saturation voltage, and package dimensions. Verify thermal resistance characteristics and switching speed profiles before substituting with generic equivalents.
