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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 33A TO-3PFM
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：33 A
- Current - Collector Pulsed (Icm)：120 A
- Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 30A
- Power - Max：72 W
- Switching Energy：480µJ (on), 490µJ (off)
- Input Type：Standard
- Gate Charge：84 nC
- Td (on/off) @ 25°C：37ns/114ns
- Test Condition：400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr)：92 ns
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3PFM, SC-93-3
- Supplier Device Package：TO-3PFM
- Grade：-
- Qualification：-
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Overview
The RGW60TK65DGVC11 is a single IGBT transistor manufactured by ROHM Semiconductor, utilizing trench field stop technology. It features a collector-emitter breakdown voltage of 650 V and a continuous collector current of 45 A at 25°C. The device has a maximum power dissipation of 89 W and a typical collector-emitter saturation voltage of 1.9 V. It operates within a junction temperature range of -40°C to +175°C and is housed in a TO-3PFM-3 through-hole package.
Feature Summary
- Trench field stop structure for low saturation voltage
- High-speed switching capability
- Integrated fast recovery diode
Applications
- Power Factor Correction (PFC) circuits
- Solar inverters
- Uninterruptible Power Supplies (UPS)
- Welding equipment
- Induction Heating (IH)
Procurement Notes
Verify the specific suffix 'C11' against the official datasheet to confirm packaging details and compliance status. Ensure the ordering part number matches the exact electrical specifications required for the design. Confirm RoHS compliance and lead-free plating requirements with the supplier before finalizing procurement.
Selection Notes
Select this component for applications requiring high-speed switching and low conduction losses in the 650V class. Compare the 45A current rating and 89W power dissipation against thermal management capabilities. Consider the TO-3PFM package for through-hole mounting needs and verify gate drive compatibility with the specified parameters.
Part Context
This device belongs to the ROHM RGW series, which focuses on high-speed switching performance. The series is designed to enhance overall system efficiency through reduced switching losses and soft switching characteristics. It serves as a key component in modern power conversion systems where speed and efficiency are critical.
Replacement Considerations
Potential substitutes include other 650V trench field stop IGBTs from ROHM with similar current ratings, such as the RGW00TK65DGVC11 or RGTH00TK65DGC11. Verify pinout compatibility and thermal resistance values when considering alternative packages or manufacturers.
