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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 33A TO-3PFM
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：33 A
- Current - Collector Pulsed (Icm)：120 A
- Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 30A
- Power - Max：72 W
- Switching Energy：480µJ (on), 490µJ (off)
- Input Type：Standard
- Gate Charge：84 nC
- Td (on/off) @ 25°C：37ns/114ns
- Test Condition：400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3PFM, SC-93-3
- Supplier Device Package：TO-3PFM
- Grade：-
- Qualification：-
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Overview
The RGW60TK65GVC11 is a Field Stop Trench IGBT manufactured by ROHM Semiconductor, designed for high-speed switching applications. It features a TO-3PFM package with single configuration and through-hole mounting. Key electrical parameters include a collector-emitter maximum voltage (VCEO) of 650 V, a continuous collector current of 45 A at 25°C, and a collector-emitter saturation voltage of 1.9 V. The device supports a power dissipation of 89 W and operates within a temperature range of -40°C to +175°C. Gate-emitter maximum voltage is rated at 30 V, with a gate-emitter leakage current of 200 nA.
Feature Summary
- High-speed switching capability utilizing Field Stop Trench technology
- Low collector-emitter saturation voltage for reduced conduction loss
- Soft switching characteristics to minimize switching losses
Applications
- Power Factor Correction (PFC) circuits
- Solar inverters
- Uninterruptible Power Supplies (UPS)
- Welding equipment
- Induction Heating (IH)
Procurement Notes
Verify the specific ordering suffix GVC11 against the manufacturer's latest datasheet to ensure correct packaging and terminal plating specifications. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer, as supply chain conditions may vary. Ensure the procurement channel provides valid traceability documentation for quality assurance purposes.
Selection Notes
Select this component when a 650V IGBT with high current handling in a TO-3PFM package is required. The 45A continuous current rating and 1.9V saturation voltage make it suitable for medium-power industrial applications. Consider thermal management requirements given the 89W power dissipation rating and verify that the driving circuit can support the specified gate voltage limits for optimal performance.
Part Context
This part belongs to ROHM's RGW series, which focuses on high-speed fast switching IGBTs. The series is engineered to enhance overall system efficiency through low switching loss and soft switching characteristics. It represents a standard-grade product line intended for general industrial use rather than automotive-grade applications.
Replacement Considerations
The RGW00TK65DGVC11 is listed as a potential replacement option. Verify pinout compatibility and electrical parameter alignment before substitution. Ensure the alternative part meets the same thermal and mechanical constraints of the original design.
FAQ
Is the RGW60TK65GVC11 suitable for automotive applications?
No, this product is classified as a standard-grade component and is not recommended for use in automotive equipment.
What type of internal diode does this IGBT contain?
The RGW60TK65GVC11 is a standalone IGBT without an integrated built-in diode, unlike some other variants in the series.
What is the typical turn-off time for this device?
Specific turn-off time values are not provided in the available summary data; refer to the official datasheet for detailed switching timing characteristics.
