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Product Detailed Parameters
- Description：IGBT 650V 64A TO-247N
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：64 A
- Current - Collector Pulsed (Icm)：120 A
- Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 30A
- Power - Max：178 W
- Switching Energy：70µJ (on), 220µJ (off)
- Input Type：Standard
- Gate Charge：84 nC
- Td (on/off) @ 25°C：37ns/91ns
- Test Condition：400V, 15A, 10Ohm, 15V
- Reverse Recovery Time (trr)：34 ns
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247N
- Grade：-
- Qualification：-
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Overview
The RGW60TS65CHRC11 is a high-speed fast switching Hybrid IGBT manufactured by ROHM Semiconductor. It integrates a Silicon Carbide Schottky Barrier Diode (SiC-SBD) to enhance performance in power conversion applications. The device features a Field Stop Trench structure within a TO-247N-3 package, designed for through-hole mounting. Key electrical specifications include a collector-emitter breakdown voltage of 650 V and a continuous collector current of 30 A at 100°C. The typical collector-emitter saturation voltage is 1.5 V, with a turn-off time of 70 ns. It supports an operating junction temperature range from -40°C to +175°C and has a maximum power dissipation of 178 W.
Feature Summary
- Integrates a built-in SiC-SBD for hybrid operation, reducing reverse recovery losses compared to standard IGBTs.
- Utilizes Field Stop Trench technology to achieve low collector-emitter saturation voltage and high-speed switching characteristics.
- AEC-Q101 qualified for automotive grade reliability standards.
Applications
- Power Factor Correction (PFC) circuits
- Solar inverters
- Uninterruptible Power Supplies (UPS)
- Industrial welding equipment
- Induction Heating (IH) systems
Procurement Notes
Verify the specific ordering suffix CHRC11 against the manufacturer's latest datasheet to confirm component revision and packaging details. Ensure that design implementations account for the device's status as a final sale or end-of-life product if applicable, checking for long-term availability constraints before committing to production volumes.
Selection Notes
Select this component when designing circuits requiring both low conduction loss and fast switching speeds with integrated freewheeling diode functionality. The TO-247N package suits high-power thermal management needs. Compare the 1.5 V Vce(sat) and 70 ns tf parameters against alternative Si-only IGBTs to evaluate efficiency gains in high-frequency switching topologies.
Part Context
This part belongs to ROHM's Series W lineup of high-speed fast switching IGBTs. It is specifically engineered for automotive and industrial power electronics where reliability under harsh conditions is critical. The integration of SiC-SBD distinguishes it from standard trench field-stop IGBTs like the RGW60TS65, offering improved soft-switching capabilities.
Replacement Considerations
The RGW60TS65CHR is listed as a similar specification part. Verify pinout compatibility and thermal resistance values when substituting. Note that the RGW60TS65CHR may have different supply status implications; confirm active manufacturing status for new designs.
