RGW60TS65GC11

Overview

The RGW60TS65GC11 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by ROHM Semiconductor. It utilizes Trench Field Stop technology to achieve high-speed switching capabilities with low saturation voltage. The device features a maximum collector-emitter voltage of 650 V and supports a continuous collector current of 30 A at 100°C, or 60 A at 25°C. Typical collector-emitter saturation voltage is 1.5 V, with a reverse recovery time of 35 ns. Power dissipation is rated at 178 W in a TO-247N-3 through-hole package, operating within a junction temperature range of -40°C to +175°C.

Feature Summary

• Trench Field Stop structure for optimized switching performance
• High speed switching capability with reduced switching losses
• Low collector-emitter saturation voltage for improved efficiency

Applications

• Power Factor Correction (PFC) circuits
• Solar inverters
• Uninterruptible Power Supplies (UPS)
• Inverter welding machines
• Induction heating appliances

Procurement Notes

Verify the component status before integration, as documentation indicates this model may be classified as Not Recommended for New Designs (NRND). Confirm RoHS compliance and lead times directly with authorized distributors. Ensure the ordering suffix matches the required tube packaging quantity of 450 units if bulk procurement is intended.

Selection Notes

Select this IGBT for applications requiring fast switching speeds and low conduction losses at 650 V blocking voltage. Compare the 30 A rating at elevated temperatures against thermal management constraints. Verify that the gate-emitter voltage limits and short-circuit withstand capabilities align with the specific driver circuit design requirements.

Part Context

This component belongs to the ROHM RGW series, which focuses on high-speed trench field stop IGBTs. It shares the TO-247N-3 package form factor with other models in the lineup but is distinguished by its specific 650 V / 30 A rating profile and 35 ns reverse recovery characteristics designed for efficient power conversion.

Replacement Considerations

Direct substitutes are not explicitly confirmed in public data. Evaluate alternatives within the same ROHM RGW series or comparable 650 V trench IGBTs from other manufacturers, ensuring matching pinouts, thermal resistance, and electrical parameters such as Vce(sat) and tf.