RGW60TS65GC13

Overview

The RGW60TS65GC13 is a Field Stop Trench IGBT manufactured by ROHM Semiconductor. It features a collector-emitter voltage (VCES) of 650 V and a continuous collector current (IC) of 30 A at 100°C, with a pulsed rating of 120 A. The typical saturation voltage (VCE(sat)) is 1.5 V at 25°C. Power dissipation reaches 178 W at a case temperature of 25°C. The device operates within a junction temperature range of -40°C to +175°C and utilizes a TO-247N package.

Feature Summary

• Field Stop Trench technology for low saturation voltage
• High-speed switching capability
• Soft switching characteristics to reduce voltage overshoot
• Lead-free plating compliant with RoHS standards

Applications

• Power Factor Correction (PFC)
• Uninterruptible Power Supplies (UPS)
• Solar Inverters

Procurement Notes

Verify the specific suffix against official documentation to confirm exact packaging or variant specifications. Confirm that the component meets required environmental compliance standards such as RoHS before integration into final designs.

Selection Notes

Select this component for applications requiring high efficiency and fast switching speeds. Ensure gate drive voltages remain above 10V to prevent thermal runaway. Consider thermal management capabilities when designing for maximum power dissipation limits.

Part Context

This part belongs to the RGW series of Field Stop Trench IGBTs from ROHM. The series is designed to balance low conduction losses with high-speed switching performance. It serves as an alternative in power conversion circuits where soft switching benefits are critical.

Replacement Considerations

Check pinout compatibility and electrical ratings against existing designs. Verify thermal resistance values and package dimensions to ensure mechanical fit without redesigning the PCB layout.