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The RGW60TS65HRC11 is a single-channel Field Stop Trench IGBT manufactured by ROHM Semiconductor, housed in a TO-247N-3 through-hole package. It features a maximum collector-emitter voltage (VCEO) of 650 V and a continuous collector current (Ic) of 64 A at 25°C. The device exhibits a typical collector-emitter saturation voltage (Vce(sat)) of 1.9 V and a maximum gate-emitter voltage (VGE) of ±30 V. Power dissipation (Pd) is rated at 178 W, with an operating temperature range spanning from -40°C to +175°C. The component utilizes silicon technology and includes a maximum gate-emitter leakage current of 200 nA.
Verify the specific ordering suffix against the manufacturer's latest datasheet to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer prior to order placement. Ensure the procurement channel provides valid traceability documentation for quality assurance purposes.
Select this component for applications requiring high-speed switching and low conduction loss within a 650V system. The TO-247N-3 package facilitates efficient heat dissipation for moderate power levels. Evaluate the 64 A continuous current rating against peak load requirements and ensure the thermal management solution supports the 178 W power dissipation limit at the intended ambient temperature.
This part belongs to the ROHM Series W, characterized by high-speed fast switching performance. It is designed as a standard-grade industrial component rather than an automotive-grade device, distinguishing it from other parts in the broader IGBT portfolio that may carry AEC-Q101 certification.
The part number alias RGW60TS65HR indicates a potential variant without the C11 suffix. Verify if the suffix change affects packaging or specific electrical tolerances before substitution. Cross-reference with other Series W devices for pin-compatible alternatives if supply constraints exist.