ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 78A TO-247GE
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：78 A
- Current - Collector Pulsed (Icm)：160 A
- Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 40A
- Power - Max：214 W
- Switching Energy：760µJ (on), 720µJ (off)
- Input Type：Standard
- Gate Charge：110 nC
- Td (on/off) @ 25°C：44ns/143ns
- Test Condition：400V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr)：92 ns
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247GE
- Grade：-
- Qualification：-
Download product information
Overview
The RGW80TS65DGC13 is a Field Stop Trench IGBT manufactured by ROHM Semiconductor, packaged in a TO-247N-3 through-hole configuration. It features an integrated Fast Recovery Diode (FRD) and supports a collector-emitter voltage of 650V with a continuous collector current of 40A at 100°C. The device exhibits a typical collector-emitter saturation voltage of 1.5V and a maximum power dissipation of 214W at 25°C case temperature. Operating junction temperatures range from -40°C to +175°C, with a storage temperature range of -55°C to +175°C.
Feature Summary
- Field Stop Trench technology for low saturation voltage
- Integrated very fast and soft recovery FRD
- High-speed switching with low switching loss
- Lead-free plating compliant with RoHS standards
Applications
- Solar Inverters
- Power Factor Correction (PFC)
- Uninterruptible Power Supplies (UPS)
- Welding Equipment
Procurement Notes
Verify the specific ordering suffix against the latest official datasheet before procurement. Confirm that the component matches the required package type and electrical ratings for the target application. Ensure compliance with environmental directives such as RoHS if applicable to the manufacturing process. Cross-reference the manufacturer's part number with authorized distributor listings to confirm authenticity and availability status.
Selection Notes
Select this component for applications requiring high-speed switching and low conduction losses. Consider the thermal resistance characteristics when designing heat sinks for sustained operation. Evaluate the gate drive requirements to ensure stable performance within the specified voltage limits. Review the safe operating area curves to prevent device failure under transient conditions.
Part Context
This IGBT belongs to the RGW series of field stop trench devices designed for general-purpose power conversion. It is distinct from automotive-grade variants and is intended for industrial and commercial power electronics. The TO-247N package provides robust mechanical stability and efficient thermal management for medium-power applications.
Replacement Considerations
Direct replacements must match the 650V rating, 40A current capacity, and TO-247N package. Verify compatibility of the integrated diode characteristics and switching speeds. Consult the manufacturer for updated product lifecycle status and recommended alternatives if the component is no longer recommended for new designs.
FAQ
What is the maximum pulsed collector current?
The maximum pulsed collector current is 160A.
Is the device suitable for radiation-tolerant applications?
No, the product is not designed to be radiation tolerant.
What is the typical reverse recovery time of the built-in diode?
The typical reverse recovery time is 92ns at 25°C junction temperature.
